BADGE – A novel Bayesian model for accurate abundance quantification and differential analysis of RNA-Seq data

Recent advances in RNA sequencing (RNA-Seq) technology have offered unprecedented scope and resolution for transcriptome analysis. However, precise quantification of mRNA abundance and identification of differentially expressed genes are complicated due to biological and technical variations in RNA-Seq data.

Researchers at Virginia Tech systematically study the variation in count data and dissect the sources of variation into between-sample variation and within-sample variation. A novel Bayesian framework is developed for joint estimate of gene level mRNA abundance and differential state, which models the intrinsic variability in RNA-Seq to improve the estimation. Specifically, a Poisson-Lognormal model is incorporated into the Bayesian framework to model within-sample variation; a Gamma-Gamma model is then used to model between-sample variation, which accounts for over-dispersion of read counts among multiple samples. Simulation studies, where sequencing counts are synthesized based on parameters learned from real datasets, have demonstrated the advantage of the proposed method in both quantification of mRNA abundance and identification of differentially expressed genes. Moreover, performance comparison on data from the Sequencing Quality Control (SEQC) Project with ERCC spike-in controls has shown that the proposed method outperforms existing RNA-Seq methods in differential analysis. Application on breast cancer dataset has further illustrated that the proposed Bayesian model can ‘blindly’ estimate sources of variation caused by sequencing biases.

RNA-Seq

Between-sample variation and within-sample variation in RNA-Seq data

Availability – The software package is available at http://www.cbil.ece.vt.edu/software.htm

Gu J, Wang X, Halakivi-Clarke L, Clarke R, Xuan J. (2014) BADGE: A novel Bayesian model for accurate abundance quantification and differential analysis of RNA-Seq data. BMC Bioinformatics 15 Suppl 9:S6. [article]